论文发表

  • 107. J. Wang, K. Zhang, Y. Li, N. You, Y. Xu, L. Li, S.-K. Wang*, Effect of Atmosphere Dependent Annealing on the Electrical Characteristics of a-In2O3 Thin-film Transistors, TED 2024
  • 106. N. You, X. Liu, Q. Zhang, Z. Wang, J. Wang, Y. Xu, X. Li, Y. Guo, S.-K. Wang*, Enhanced quality of Al2O3/SiC gate stack via microwave plasma annealing, Rare Metals 2024
  • 105. Q. Zhang, N. You, J. Wang, Y. Xu, K. Zhang, S.-K. Wang*, Effect of Temperature-Dependent Low Oxygen Partial Pressure Annealing on SiC MOS, nanomaterials 2024
  • 104. Y. Li, K. Zhang, J. Wang, N. You, Y. Xu, Z. Bai, Z. Wu, G. Yang, L. Li, S.-K. Wang*, E-mode IGO TFT by Co-optimizing In:Ga and Ar:O2 Ratio during Sputtering, IWDTF2023 (Oct. Kanazawa)
  • 103. N. You, Q. Zhang, J. Wang, Y. Xu, K. Zhang, Y. Li, S.-K. Wang*, Utilizing High-Pressure Microwave Plasma Oxidation for Advanced SiC MOS, IWDTF2023 (Oct. Kanazawa)
  • 102. Y. Xu, J. Wang, N. You, H. Dong, W.-H. Wang, X. Liang, S.-K. Wang*,Thermal Desorption Study of PCz-sorted SWCNTs for Electronic Hourglass Device, SSDM2023 (Spe. Nagoya)
  • 101. Q. Zhang, N. You, J. Wang, Y. Xu, Y. Wang, K. Zhang, S.-K. Wang*, Role of P(O2) in annealing of the SiO2/SiC Stack formed by Si deposition plus oxidation, SSDM2023 (Spe. Nagoya)
  • 100. K. Zhang, J. Wang, Y. Xu, N. You, Q. Zhang, Y. Wang, S.-K. Wang*, Variable Photocurrent Method Characterization of Subgap Defects in In2O3 TFT, SSDM2023 (Spe. Nagoya)
  • 99. J. Wang, K. Zhang, Y. Li, N. You, Y. Xu, L. Li, S.-K. Wang*, Role of Weakly-bonded and Excess Oxygen in a-In2O3 Thin-Film Transistors, SSDM2023 (Spe. Nagoya)
  • 98. Q. Zhang, N. You*, P. Liu, J. Wang, Y. Xu, S.-K. Wang*, Study of defects distribution in SiO2/SiC with plasma oxidation and post oxidation annealing, Applied Surface Science, 610, 155500 (2023).
  • 97. Y. Xu, Q. Hu, Y. Zhou, J. Wang, Q. Huang, J. Zhao, X. -L. Liang, S.-K.  Wang*, PCz sorted SWCNTs-TFT “Electronic Hourglass” and its Recovery Behavior, H-8-03, SSDM2022 (Sep. Tokyo)
  • 96. N. N. You, X. Y. Liu, Q. Zhang, J. Wang, Y. Xu, Y. Wang, S.-K. Wang*, High Quality Al2O3/SiC Gate Stack Fabricated by Microwave Plasma Annealing, J-6-04, SSDM2022 (Sep. Tokyo)
  • 95. Q. Hu, Y. Xu, Y, Zhou, S. -K. Wang*, Q. Huang, J. Zhao, X.-L. Liang*, Utlizing an SWCNT-TFT “Electronic Hourglass” for Artifical Synapse Application, ACS Applied Electronic Materials, 4, 974 (2022).
  • 94. 曹茜茜;魏淑华;姚沛林;张静;王艳蓉;王盛凯*, PVDF压电薄膜的性能优化研究进展与展望, 压电与声光, 2021年第4期542-549.
  • 93.  Z. Feng, Y. Wang, J. Hao, M. Jing, F. Lu, W. Wang, Y. Cheng, S. K. Wang, H. Liu, H. Dong, Designing high-k dielectric films with LiPON-Al2O3 hybrid structure by atomic layer deposition, Chin. Phys. B, 2021, (Nov. 6 online)
  • 92.  Q. Zhang, N. N. You, P. Liu, S. K. Wang*, Effect of POA Treatment on Microwave Plasma Oxidized SiO2/SiC Gate Stack, IWDTF, Nov. 16. 2021.
  • 91.  N. N. You, X. Y. Liu, Y. Bai, P. Liu, Q. Zhang, Y. Zhang, S.-K. Wang*, Oxygen Out-diffusion to the Ambient During SiO2/SiC Oxidation, IWDTF, Nov. 16. 2021.
  • 90.  N. N. You, X. Y. Liu, Y. Bai, P. Liu, Q. Zhang, S.-K. Wang* Demonstration of non-negligible oxygen exchange in the thermal oxidation of silicon carbide, Vacuum, 2021, 191, 110403
  • 89. N. N. You, X. Y. Liu, Y. Bai, P. Liu, Q. Zhang, Y. Zhang, S.-K. Wang*, Oxidation Kinetics of SiC in Microwave Oxygen Plasma, Applied Surface Science, 2021, 562, 150165
  • 88. S. K. Wang*, X. L. Wang*, MOS Interface Physics, Process, and Characterization, 2021, CRC Press, Taylor&Francis, Boca Raton, FL. https://doi.org/10.1201/9781003216285
  • 87. P. Liu, J. L. Hao, S.-K. Wang*, N. N. You, Q. Y. Hu, Q. Zhang, Y. Bai, X. Y. Liu, Impact of O2 post oxidation annealing on the reliability of SiC/SiO2 MOS capacitors, Chin. Phys. B, 2021, 30, 7, 077303.
  • 86. N. N. You#, X. Y. Liu#,*, J. L. Hao, Y. Bai, S.-K. Wang*, Microwave plasma oxidation kinetics of SiC based on fast oxygen exchange, Vacuum, 2020, 182, 109762-1-109762-9. https://doi.org/10.1016/j.vacuum.2020.109762
  • 85. N. You, X. Y. Liu, Y. Bai, Q. Zhang, P. Liu, S.-K. Wang*, Demonstration of non-negligible oxygen exchange in the thermal oxidation of silicon carbide, Vacuum, 2021, 191, 110403-1-110403-6.85. https://doi.org/10.1016/j.vacuum.2021.110403
  • 84. N. N. You, X. Y. Liu, Y. Bai, P. Liu, Q. Zhang, Y. Zhang, S.-K. Wang*, Oxidation Kinetics of SiC in Microwave Oxygen Plasma, Applied Surface Science, 2021, 562, 150165-1 – 150165-7.84. https://doi.org/10.1016/j.apsusc.2021.150165
  • 83. X. Y. Liu*, J. L. Hao, N. N. You, Y. Bai, Y. D. Tang, C. Y. Yang, S. K. Wang*, High mobility SiC MOSFET with low Dit using high pressure microwave plasma oxidation, Chin. Phys. B, 29 (2020) 037301. https://doi.org/10.1088/1674-1056/ab68c0.
  • 82. X. Y. Liu*, J. L. Hao, N. N. You, Y. Bai, S. K. Wang*, High-pressure microwave plasma oxidation of 4H-SiC with low interface trap density, AIP Advances, 9 (2019) 125150.
  • 81. S. K. Wang*, Q. Huang, J. Zhao, Y. Zhou, X. L. Zhao, P. L. Yao, X. Y. Liu, X. L. Liang, Electro-chemiresistive Functionalization of SWCNT-TFT by PCz and Its “Electronic Hourglass” Application with Zero-static Power Consumption, ACS Applied Energy Materials, 2 (2019) 8253.
  • 80. Y. Zhou, S. K. Wang*, Q. Huang, J. Zhao, Q. Y. Hu, H. L. Lu, X. L. Liang, Electro-chemiresistive Functionalization of Radom Network of SWCNT for Artificial Synapses, 5th International Conference on 2D Materials and Technology (ICON-2DMAT 2019), (Oct. Suzhou, 2019)
  • 79. Y. Xu, S. K. Wang*, P. L. Yao, Y. H. Wang, D. P. Chen, An air-plasma enhanced low-temperature wafer bonding method using high-concentration water glass adhesive layer, Applied Surface Science 500 (2020) 144007
  • 78. S. K. Wang*, J. L. Hao, N. N. You, Y. Bai, X. Y. Liu*, Rapid Growth of SiO2 on SiC with Atomically Flat Interface and Low Dit using High Pressure Microwave Oxygen Plasma, ICSCRM2019 (Oct. Kyoto, 2019)
  • 77. N. N. You, S. K. Wang*, J. L. Hao, Y. Bai, X. Y. Liu, Investigation of SiC Microwave Plasma Oxidation Kinetics via Oxygen Isotope Labelling, ICSCRM2019 (Oct. Kyoto, 2019)
  • 76. S. K. Wang*, Rapid Growth of SiO2 on SiC with Low Dit using High Pressure Microwave Oxygen Plasma (Invited), ASICON2019(Nov. Beijing, 2019)
  • 75. Y. Xu, S. Wang*, Y. Wang, and D. Chen, A Modified Low-Temperature Wafer Bonding Method using High-concentration Water Glass in Nitrogen Ambient, ADMETA2018 (P-30，Oct. Beijing 2018).
  • 74. S. Wang*, Q. Huang, J. Zhao, X. Zhao, Y. Zhou, X. Liu, X. Liang*, Hysteretic Single Walled Carbon Nanotube Thin Film Transistor for Ultralow Static Power Consumption Application, SSDM2018 (PS-8-17，Sep. Tokyo 2018).
  • 73. Z. Peng, J. Hao, S. Wang*, Y. Bai, Y. Tang, X. Liu*, Estimation of Border Trap Distribution in Electron Irradiated SiC MOS Capacitor Using High Temperature 1M Hz C-V Method, SSDM2018 (PS-4-17，Sep. Tokyo 2018).
  • 72. X. Zhao, S. Wang*, L. Zhu*, Spike Pattern Dependent Characteristics of Artificial Neuron using Proton Conductive SiO2 Electrolyte and InZnO System, SSDM2018 (N-3-02，Sep. Tokyo 2018).
  • 71. Z. Y. Peng, S. K. Wang*, Y. Bai, Y. D. Tang, X. M. Chen, C. Z. Li, K. A. Liu, X. Y. Liu, “High Temperature 1MHz CapacitanceVoltage Method for Evaluation of Border Traps in 4HSiC MOS System”, J. Appl. Phys. 123 (2018) 135302.
  • 70. Y. Xu, S. Wang*, Y. Wang, and D. Chen, “A modified low-temperature wafer bonding method using spot pressing bonding technique and water glass adhesive layer,” Japanese Journal of Applied Physics, vol. 57, no. 2, Feb, 2018.
  • 69. Y. Xu, S. Wang*, Y. Wang, D. Chen, Z. Jin, X. Liu, A Modified Water Glass Adhesive Bonding Method using Spot Pressing Bonding Technique, ICSICT 2017.
  • 68. X. Wang, J. Xiang, K. Han, S. Wang, J. Luo, C. Zhao, T. Ye, H. H. Radamson, E. Simoen, and W. Wang, “Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFETs,” Ieee Transactions on Electron Devices, vol. 64, no. 6, pp. 2611-2616, Jun, 2017.
  • 67. S.-K. Wang, B. Sun, M.-M. Cao, H.-D. Chang, Y.-Y. Su, H.-O. Li, and H.-G. Liu, “Modification of Al2O3/InP interfaces using sulfur and nitrogen passivations,” Journal of Applied Physics, vol. 121, no. 18, May 14, 2017.
  • 66. S.-K. Wang, L. Ma, H.-D. Chang, B. Sun, Y.-Y. Su, L. Zhong, H.-O. Li, Z. Jin, X.-Y. Liu, and H.-G. Liu, “Positive Bias Temperature Instability Degradation of Buried InGaAs Channel nMOSFETs with InGaP Barrier Layer and Al2O3 Dielectric,” Chinese Physics Letters, vol. 34, no. 5, May, 2017.
  • 65. B. Sun, H. Chang, S. Wang, J. Niu, and H. Liu, “ALD Al2O3 passivation of L-g=100 nm metamorphic InAlAs/InGaAs HEMTs with Si-doped Schottky layers on GaAs substrates,” Solid-State Electronics, vol. 138, pp. 40-44, Dec, 2017.
  • 64. S. K. Wang, “Germanium and III-Vs for future logic (Invited)”, Compound Semiconductor-International, March 7-8, Brussels Belgium, 2017.
  • 63. S. K. Wang, H. G. Liu, “Passivation and Characterization in High-k/III-V Interfaces”, in book entitled “Nanoscale Semiconductor Devices, MEMS, and Sensors: Outlook and Challenges”, Springer Publisher, New York, USA, 2017.

Before 2017

  • 62. 林子曾, 曹明民, 王盛凯, 李琦, 肖功利, 高喜, 刘洪刚, and 李海鸥, “The effect of nitridation and sulfur passivation for In_(0.53)Ga_(0.47)As surfaces on their Al/Al_2O_3/InGaAs MOS capacitors properties,” Journal of Semiconductors, vol. 37, no. 2, pp. 026002-1-026002-5, 2016, 2016.
  • 61. S. Zhang, S. Wang, F. Zheng, and C. Jin, “Effect of electric-field-assisted thermal treatment on the strain and ferroelectric properties of (100)-oriented ferroelectric Pb(Zr0.52Ti0.48) O-3 thin films,” Journal of Physics and Chemistry of Solids, vol. 99, pp. 148-152, Dec, 2016.
  • 60. X. Wei, S. K. Wang, X. Yang, Y. H. Wang, D. P. Chen, H. G. Liu, and Ieee, “An Asynchronous Wafer Bonding Method Using Spot Pressing Technique,” 7th Ieee International Nanoelectronics Conference, International Nanoelectronics Conference, 2016.
  • 59. X. Wang, J. Xiang, S. Wang, W. Wang, C. Zhao, T. Ye, Y. Xiong, and J. Zhang, “Remote interfacial dipole scattering and electron mobility degradation in Ge field-effect transistors with GeOx/Al2O3 gate dielectrics,” Journal of Physics D-Applied Physics, vol. 49, no. 25, Jun 29, 2016.
  • 58. S. K. Wang, “Turbo charging the channel (Invited feature)”, Compound Semiconductor, 1, 22-30, (2016).
  • 57. S. K. Wang, H. Chang, B. Sun, Z. Gong, H. G. Liu, L. Ma, H. Li, and Ieee, “Positive Bias Temperature Instability Degradation of Buried InGaAs Channel n-MOSFETs with InGaP barrier layer and Al2O3 Dielectric,” 7th Ieee International Nanoelectronics Conference, International Nanoelectronics Conference, 2016.
  • 56. S. K. Wang, H. Chang, B. Sun, Z. Gong, H. G. Liu, M. Cao, Z. Lin, H. Li, and Ieee, “Coordination Number Modification at Al2O3/InP Interfaces using Sulfur and Nitride Passivations,” 7th Ieee International Nanoelectronics Conference, International Nanoelectronics Conference, 2016.
  • 55. B. Sun, H. Chang, S. Wang, P. Ding, J. Niu, Z. Gong, H. Liu, and Ieee, “100-nm Gate-Length GaAs mHEMTs Using Si-doped InP/InAlAs Schottky Layers and Atomic Layer Deposition Al2O3 Passivation with fmax of 388.2 GHz,” 7th Ieee International Nanoelectronics Conference, International Nanoelectronics Conference, 2016.
  • 54. Z. Gong, H. Chang, S. Wang, Y. Li, B. Sun, H. Liu, and Ieee, “Simulation study of an enhancement-mode n-type InGaAs MOSFETs with a low zero bias off-current,” 7th Ieee International Nanoelectronics Conference, International Nanoelectronics Conference, 2016.
  • 53. H. D. Chang, B. Sun, Z. J. Gong, J. B. Niu, S. K. Wang, H. G. Liu, and Ieee, “100nm Gate length enhancement -mode In0.4Ga0.6As MOSFETs with InGaP interfacial layer and Al2O3 as gate oxide,” 7th Ieee International Nanoelectronics Conference, International Nanoelectronics Conference, 2016.
  • 52. S.-K. Wang, M. Cao, B. Sun, H. Li, and H. Liu, “Reducing the interface trap density in Al2O3/InP stacks by low-temperature thermal process,” Applied Physics Express, vol. 8, no. 9, Sep, 2015.
  • 51. Z. Zeng, B. Sun, H. Chang, W. Zhao, X. Yang, J. Zhou, S. Wang, X. Zhang, Y. Cui, H. Liu, and Ieee, IMPACTS OF ANNEALING PROCESSES ON THE ELECTRICAL PROPERTIES OF GASB METAL-OXIDE-SEMICONDUCTOR DEVICES, ICSICT 2014.
  • 50. X. Yang, S.-K. Wang, X. Zhang, B. Sun, W. Zhao, H.-D. Chang, Z.-H. Zeng, and H. Liu, “Al2O3/GeOx gate stack on germanium substrate fabricated by in situ cycling ozone oxidation method,” Applied Physics Letters, vol. 105, no. 9, Sep 1, 2014.
  • 49. X. Yang, S.-K. Wang, B. Sun, W. Zhao, H.-D. Chang, Z.-H. Zeng, X. Zhang, Y.-P. Cui, H.-G. Liu, and Ieee, A COMPARATIVE STUDY OF Ge MOSFET USING Al2O3/GeOx/Ge STACKS FORMING HIGH QUALITY GeOx INTERFACE LAYER TO BOOST DEVICE PERFORMANCE, ICSICT 2014.
  • 48. B. Sun, W. Zhao, S. Y. Li, H. D. Cang, S. K. Wang, J. Q. Pan, H. G. Liu, and Ieee, THE EFFECT OF IN-SITU OZONE ANNEALING PER CYCLE ON Al2O3 GATE DIELECTRIC DEPOSITED BY ATOMIC LAYER DEPOSITION USING TMA AND H2O FOR InGaAs MOS CAPACITOR, ICSICT 2014.
  • 47. L. Han, S.-K. Wang, X. Zhang, B.-Q. Xue, W.-R. Wu, Y. Zhao, and H.-G. Liu, “Effect of ultrathin GeOx interfacial layer formed by thermal oxidation on Al2O3 capped Ge,” Chinese Physics B, vol. 23, no. 4, Apr, 2014.
  • 46. S. K. Wang, X. Yang, Z. J. Gong, B. Sun, W. Zhao, H. D. Chang, H. G. Liu, “Si-substrate-based High Mobility Ge-pMOSFETs Using Ozone Passivated Al2O3/GeOx Gate Dielectric”, SSDM2014 (Sep. Fukuoka, 2014)
  • 45. X. Yang, S.-K. Wang, L. Han, X. Zhang, B. Sun, H.-D. Chang,W. Zhao, Z.-H. Zeng, H.-G. Liu, Y.-P. Cui, “High-k/Ge interface passivation using cycling ozone oxidation”, SSDM2014 (Sep. Fukuoka, 2014)
  • 44. Z. J. Gong, S. K. Wang, X. Yang, B. Sun, W. Zhao, H. D. Chang, H. G. Liu, and Ieee, SCHOTTKY BARRIER HEIGHT MODULATION IN METAL/N-GE SYSTEM,ICSICT 2014.
  • 43. H. D. Chang, J. H. Zhou, G. M. Liu, Z. H. Zeng, W. Zhao, B. Sun, S. K. Wang, X. L. Zhou, J. Q. Pan, H. G. Liu, and Ieee, InGaAs Complementary metal-oxide-semiconductor fabricated on GaAs Substrate using Al2O3 as gate oxide, ICSICT2014.
  • 42. B.-Q. Xue, S.-K. Wang, L. Han, H.-D. Chang, B. Sun, W. Zhao, and H.-G. Liu, “High-mobility germanium p-MOSFETs by using HCl and (NH4)(2)S surface passivation,” Chinese Physics B, vol. 22, no. 10, Oct, 2013.
  • 41. H. Guo, X. Zhang, H. Chen, H. Liu, P. Zhang, Q. Liao, S. Hu, H. Chang, B. Sun, S. Wang, and Y. Cui, “High-Performance GaN-Based Light-Emitting Diodes on Patterned Sapphire Substrate with a Novel Patterned SiO2/Al2O3 Passivation Layer,” Applied Physics Express, vol. 6, no. 7, Jul, 2013.
  • 40. H. Chen, H. Guo, P. Zhang, X. Zhang, H. Liu, S. Wang, and Y. Cui, “Enhanced Performance of GaN-Based Light-Emitting Diodes by Using Al Mirror and Atomic Layer Deposition-TiO2/Al2O3 Distributed Bragg Reflector Backside Reflector with Patterned Sapphire Substrate,” Applied Physics Express, vol. 6, no. 2, Feb, 2013.
  • 39. L. Han, S. K. Wang, X. Zhang, H. D. Chang, W. Zhao, B. Sun, H. Liu, Y. Cui, Effect of GeOx Interfacial Layer Formed by Ozone Oxidation Process on Ge MOS devices, IWDTF2013, (Nov. Tokyo 2013)
  • 38. S. K. Wang, X. L. Wang, L. Han, W. Zhao, B. Sun, W. W. Wang, C. Zhao, H. Liu, Modified Deal-Grove model for the thermal oxidation of Ge and Al2O3 capped Ge, SSDM2013 (Sep. Tokyo 2013).
  • 37. X. L. Wang, S. K. Wang, J. Zhang, W. W. Wang, H. G. Liu, J. Yan, C. Zhao, D. P. Chen, T. C. Ye, Dependence of Band Alignment and Interfacial Suboxide GeOx Thickness of Thermal GeO2/Ge Stacks on GeO2 Thickness by X-ray Photoelectron Spectroscopy, SSDM2013 (Sep. Tokyo 2013).
  • 36. L. Han, S. K. Wang, B. Q. Xue, X. Zhang, W. R. Wu, H. D. Chang, W. Zhao, B. Sun, Y. Zhao, H. Liu, Ultrathin GeOx Interfacial Repairer Formed by Thermal Oxidation for Germanium MOS Devices, SSDM2013 (Sep. Tokyo 2013)
  • 35. H.-D. Chang, B. Sun, B.-Q. Xue, G.-M. Liu, W. Zhao, S.-K. Wang, and H.-G. Liu, “Effect of the Si-doped In0.49Ga0.51P barrier layer on the device performance of In0.4Ga0.6As MOSFETs grown on semi-insulating GaAs substrates,” Chinese Physics B, vol. 22, no. 7, Jul, 2013.
  • 34. B.-Q. Xue, H.-D. Chang, B. Sun, S.-K. Wang, and H.-G. Liu, “The Impact of HCl Precleaning and Sulfur Passivation on the Al2O3/Ge Interface in Ge Metal-Oxide-Semiconductor Capacitors,” Chinese Physics Letters, vol. 29, no. 4, Apr, 2012.
  • 33. 王盛凯， Interfaces in Ge MOSFETs, 第八届全国材料大会，2012年8月，哈尔滨.
  • 32. S. K. Wang, B.-Q. Xue, B. Sun, H.-L. Liang, Z.-X. Mei, W. Zhao, X.-L. Du, and H.-G. Liu, Comprehensive study of interface passivation in Ge-MOSFETs -Control the interfacial layer for high performance devices, ICSICT 2012.
  • 31. S. K. Wang, H.-G. Liu, and A. Toriumi, “Kinetic study of GeO disproportionation into a GeO2/Ge system using x-ray photoelectron spectroscopy,” Applied Physics Letters, vol. 101, no. 6, Aug 6, 2012.
  • 30. S. K. Wang, H.-G. Liu, T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi, “Investigations on GeO Disproportionation Using X-ray Photoelectron Spectroscopy,” Sige, Ge, and Related Compounds 5: Materials, Processing, and Devices, ECS Transactions 9, D. Harame, T. Krishnamohan, S. Miyazaki, A. Reznicek, B. Tillack, Y. C. Yeo, M. Caymax, G. Masini, G. Niu, K. Saraswat, B. Vincent and K. Uchida, eds., pp. 557-567, 2012.
  • 29. Y. Li, S. Wang, B. Sun, H. Chang, W. Zhao, X. Zhang, and H. Liu, “Room temperature wafer bonding by surface activated ALD-Al2O3,” Semiconductor Wafer Bonding 12: Science, Technology, and Applications, ECS Transactions 7, M. S. Goorsky, R. Knechtel, K. Hobart, T. Suga, C. Colinge, H. Baumgart and H. Moriceau, eds., pp. 303-311, 2012.
  • 28. S. K. Wang, B. Q. Xue, H. L. Liang, Z. X. Mei, Y. Li, W. Zhao, B. Sun, X. L. Du, H. G. Liu, “Growth of Epitaxial Beryllium Oxide on Ge (111) by Molecular Beam Epitaxy”, SSDM 2012 (Sep. Kyoto, Japan)
  • 27. H. Chen, S. Wang, B. Sun, H. Guo, W. Zhao, H. Chang, X. Zhang, and H. Liu, Backside Reflector using Metallic Mirror and ALD-TiO2/Al2O3 DBR for GaN-Based LED, ICSICT 2012.
  • 26. S. K. Wang, B. Q. Xue, H. L. Liang, Z. X. Mei, Y. Li, W. Zhao, B. Sun, X. L. Du, H. G. Liu, “Comprehensive study of interface passivation in Ge-MOSFETs-Control the interfacial layer for high performance devices-“, ICSICT2012.
  • 25. L. Q. Zhu, K. Kita, T. Nishimura, K. Nagashio, S. K. Wang, and A. Toriumi, “Interfacial Dipole at High-k Dielectric/SiO2 Interface: X-ray Photoelectron Spectroscopy Characteristics,” Japanese Journal of Applied Physics, vol. 50, no. 3, Mar, 2011.
  • 24. S. K. Wang, K. Kita, T. Nishimura, K. Nagashio, and A. Toriumi, “Kinetic Effects of O-Vacancy Generated by GeO2/Ge Interfacial Reaction,” Japanese Journal of Applied Physics, vol. 50, no. 10, Oct, 2011.
  • 23. S. K. Wang, K. Kita, T. Nishimura, K. Nagashio, and A. Toriumi, “Isotope Tracing Study of GeO Desorption Mechanism from GeO2/Ge Stack Using Ge-73 and O-18,” Japanese Journal of Applied Physics, vol. 50, no. 4, Apr, 2011.
  • 22. A. Toriumi, C. H. Lee, S. K. Wang, T. Tabata, M. Yoshida, D. D. Zhao, T. Nishimura, K. Kita, K. Nagashio, and Ieee, Material Potential and Scalability Challenges of Germanium CMOS, IEDM 2011.
  • 21. A. Toriumi, C. H. Lee, T. Nishimura, S. K. Wang, K. Kita, and K. Nagashio, “Recent progress of Ge technology for a post-Si CMOS,” Dielectrics in Nanosystems -and- Graphene, Ge/Iii-V, Nanowires and Emerging Materials for Post-Cmos Applications 3, ECS Transactions 3, Z. Karim, P. Srinivasan, S. DeGendt, D. Misra and Y. Obeng, eds., pp. 443-456, 2011.
  • 20. S. K. Wang, K. Kita, K. Nagashio, T. Nishimura, and A. Toriumi, “Oxygen Vacancy Formation, Diffusion and GeO desorption in GeO2/Ge Stack”,  42th IEEE Semiconductor Interface Specialists Conference (SISC2011),  (Dec.3, 2011, Arlington)
  • 19. S. K. Wang, K. Kita, T. Nishimura, K. Nagashio, and A. Toriumi, “Interfacial Reaction Induced GeO Desorption, GeO2 Crystallization and Non-uniform Void Formation in GeO2/Ge Stack”, 2011 MRS Spring Meeting (Apr. 28, 2011, San Francisco)
  • 18. A. Toriumi, C.H. Lee, T. Nishimura, D. Zhao, S.K. Wang, K. Kita, and K. Nagashio, “Very High Electron and Hole Mobility in Ge MOSFETs”, invited, 2011 MRS Spring Meeting (Apr. 27, 2011, San Francisco)
  • 17. S. K. Wang, K. Kita, T. Nishimura, K. Nagashio, and A. Toriumi, “Kinetic Effects of Oxygen Vacancy Formed by GeO2/Ge Interfacial Reaction”, 2011 International Workshop on Dielectric Thin Film for Future Electron Devices (IWDTF2011),pp. 31-32 . (Jan. 20, 2011, Tokyo).
  • 16. T. Nishimura, C. H. Lee, T. Tabata, S. K. Wang, K. Nagashio, K. Kita, and A. Toriumi, “High-Electron-Mobility Ge n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y2O3,” Applied Physics Express, vol. 4, no. 6, Jun, 2011.
  • 15. L. Q. Zhu, K. Kita, T. Nishimura, K. Nagashio, S. K. Wang, and A. Toriumi, “Observation of Dipole Layer Formed at High-k Dielectrics/SiO2 Interface with X-ray Photoelectron Spectroscopy,” Applied Physics Express, vol. 3, no. 6, 2010, 2010.
  • 14. S. K. Wang, K. Kita, C. H. Lee, T. Tabata, T. Nishimura, K. Nagashio, and A. Toriumi, “Desorption kinetics of GeO from GeO2/Ge structure,” Journal of Applied Physics, vol. 108, no. 5, Sep 1, 2010.
  • 13. A. Toriumi, S. K. Wang, C. H. Lee, M. Yoshida, K. Kita, T. Nishimura, and K. Nagashio, “Oxidation, Diffusion, and Desorption in a Ge/GeO2 System,” Dielectrics for Nanosystems 4: Materials Science, Processing, Reliability, and Manufacturing, ECS Transactions 2, D. Misra, Z. Chen, H. Iwai, D. Bauza, T. Chikyow and Y. Obeng, eds., pp. 171-180, 2010.
  • 12. A. Toriumi, C. H. Lee, T. Nishimura, K. Kita, S. K. Wang, M. Yoshida, and K. Nagashio, “Feasibility of Ge CMOS for Beyond Si-CMOS,” Sige, Ge, and Related Compounds 4: Materials, Processing, and Devices, ECS Transactions 6, D. Harame, M. Ostling, G. Masini, T. Krishnamohan, S. Bedell, A. Reznicek, J. Boquet, Y. C. Yeo, M. Caymax, B. Tillack, S. Miyazaki and S. Koester, eds., pp. 33-46, 2010.
  • 11. T. Nishimura, C.H. Lee, S.K. Wang, T. Tabata, K. Kita, K. Nagashio, and A. Toriumi, “Electoron Mobility in High-k Ge MISFETs Goes up to Higher.” 2010 Symposium on VLSI Technology Digest of Technical Papers,p.209 , (Jun. 17, 2010, Honolulu)
  • 10. C.H. Lee, T. Nishimura, T. Tabata, S.K. Wang, K. Nagashio, K. Kita and A. Toriumi, “Ge MOSFETs Performance: Impact of Ge Interface Passivation”, 2010IEEE International Electron Device Meeting(IEDM2010), pp.416-419.(Dec. 7, 2010, San Francisco).
  • 9 A. Toriumi, C. H. Lee, T. Nishimura, K. Kita, S. K. Wang, M. Yoshida, and K. Nagashio,  “Feasibility of Ge CMOS for Beyond Si-CMOS”, Invited, The 218th Electrochemical Society Meeting　(Oct. 11, 2010, Las Vegas)
  • 8. S. K. Wang, K. Kita, T. Nishimura, K. Nagashio and A.Toriumi, “Crystallization of Thick Amorphous GeO2 on Ge to α-quartz Structure – Experimental Evidence and Crystallization Model”, 41th IEEE Semiconductor Interface Specialists Conference International(SISC2010)（Dec. 2, 2010, San Diego).
  • 7. 王 盛凱, 喜多浩之, 西村知紀, 長汐晃輔, 鳥海 明,「低圧酸素雰囲気下におけるGe表面の活性酸化」, 2010年春季 第57回 応用物理学関係連合講演会, (2010年3月18日, 神奈川）
  • 6. 王 盛凱, 喜多浩之, 田畑俊行, 西村知紀, 長汐晃輔, 鳥海 明, 「Ge/GeO2界面から脱離するGeOのTDSによる解析」.ゲートスタック研究会－材料・プロセス・評価の物理－（第16回研究会）,pp.169-172 (2010年1月22日, 三島）
  • 5. S. K. Wang, K. Kita, T. Nishimura, K. Nagashio and A. Toriumi, “GeO Desorption Mechanism from GeO2/Ge Stack Determined by 73Ge Labeling Technique in Thermal Desorption Spectroscopy (TDS) Analysis”, 2010 International Conference on Solid State Devices and Materials(SSDM), pp35-36.(Sep.22, 2010, Tokyo)
  • 4. K. Kita, S.K. Wang, M. Yoshida, C.H. Lee, K. Nagashio, T.Nishimura and A.Toriumi
    “Comprehensive Study of GeO2 Oxidation, GeO Desorption and GeO2-Metal Interaction . Understanding of Ge Processing Kinetics for Perfect Interface Control-” 2009IEEE International Electron Device Meeting(IEDM),pp.693-696.(Dec. 9, 2009,Baltimore).
  • 3. S.K. Wang, K. Kita, C.H. Lee, T. Tabata, K. Nagashio, T. Nishimura and A. Toriumi, “Kinetic Study of GeO Desorption from Ge/GeO2 system,” 40th IEEE Semiconductor Interface Specialists Conference International(SISC2009)（Dec. 3, 2009, Arlington)
  • 2. S. Wang, K. Kita, T. Nishimura, K. Nagashio and A. Toriumi, “18O isotope tracing of GeO Desorption from GeO2/Ge Structure”, Int. conf. on Solid State Devices and Materials, (Oct. 9, 2009,Sendai)
  • 1. 王　盛凱，喜多浩之，李　忠賢，西村知紀，長汐晃輔，鳥海　明，「Ge/GeO2からのGeO脱離における活性化エネルギーのTDSによる評価」，第70回応用物理学会学術講演会，11a-TD-10 （2009年9月11日, 富山）